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NSS30101LT1G 30 V, 2 A, Low VCE(sat) NPN Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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30 VOLTS 2.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW
COLLECTOR 3 1 BASE
* This is a Pb-Free Device
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc A A
2 EMITTER
3 1 2 SOT-23 (TO-236) CASE 318 STYLE 6
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 310 2.5 RJA (Note 1) PD (Note 2) 403 710 5.7 RJA (Note 2) PDsingle TJ, Tstg 176 575 -55 to +150 Unit mW mW/C C/W mW mW/C C/W mW C
1
DEVICE MARKING
3
VS6
2
VS6 = Specific Device Code
ORDERING INFORMATION
Device NSS30101LT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 X 1.0 inch Pad.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
June, 2005 - Rev. 0
Publication Order Number: NSS30101L/D
NSS30101LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = 30 Vdc) Emitter Cutoff Current (VEB = 4.0 Vdc) V(BR)CEO 30 V(BR)CBO 50 V(BR)EBO 5.0 ICBO - ICES - IEBO - 0.1 0.1 mAdc 0.1 mAdc - mAdc - Vdc - Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) Collector -Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) Base -Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) Base -Emitter Turn-on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 300 300 200 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cobo - 15 - pF 1.1 MHz 1.1 V 0.200 0.125 0.075 V - 900 - V
1.0 0.9 0.8 0.7 VCE (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 IC = 500 mA IC = 100 mA 0.001 0.01 Ib (A) 0.1 0.2 IC = 1 A VCE (V) IC = 2 A
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 Ic (A) 0.1 1 2 Ic/Ib = 100 Ic/Ib = 10
Figure 1. VCE versus Ib
Figure 2. VCE versus Ic
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2
NSS30101LT1G
800 VCE = 5 V 700 600 VBE(on) (V) 500 hFE 400 300 200 100 0 0.001 0.01 Ic (A) 0.1 1 2 0.2 0 -55C 0.8 +25C 0.6 0.4 +125C -55C +25C +125C 1.0 1.2 VCE = 5 V
0.001
0.01 Ic (A)
0.1
1
2
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
1.2 1.0 Ic/Ib = 10 0.8 VBE (V) Ic/Ib = 100 0.6 0.4 0.2 0 IC COLLECTOR CURRENT (A)
10
1 1 ms 10 ms 100 ms 1s SINGLE PULSE Tamb = 25C dc 10 VCE (V) 100
0.1
0.001
0.01 Ic (A)
0.1
1
2
0.01
0.1
1
Figure 5. VBE(sat) versus Ic
0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1
Figure 6. Safe Operating Area
1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
Figure 7. Normalized Thermal Response
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NSS30101LT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSS30101L/D

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